Contacts of titanium nitride to n- and p-type gallium nitride films

Solid-State Electronics

Volumn 43, Issue 10, 1999, Pages 1969-1972

  Dimitriadis, C A ^a   Karakostas, Th ^a   Logothetidis, S ^a   Kamarinos, G ^b   Brini, J ^b   Nouet, G ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b Grenoble INP Phelma   (France)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MAGNETRON SPUTTERING; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SPUTTER DEPOSITION; STOICHIOMETRY; TITANIUM NITRIDE;

GALLIUM NITRIDE; REACTIVE MAGNETRON SPUTTERING;

SEMICONDUCTING FILMS;

EID: 0033328522     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00153-7     Document Type: Article

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