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Volumn 179, Issue 1-4, 2001, Pages 213-221

Auger depth profile analysis and EFTEM analysis of annealed Ti/Al-contacts on Si-doped GaN

Author keywords

Auger; EFTEM; GaN; Metallization layer; Ohmic contacts

Indexed keywords

ANNEALING; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; INTERDIFFUSION (SOLIDS); INTERMETALLICS; METALLIZING; MICROSTRUCTURE; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TITANIUM ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0035898803     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00282-3     Document Type: Article
Times cited : (6)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.