Indium tin oxide ohmic contact to highly doped n-GaN

Solid-State Electronics

Volumn 43, Issue 11, 1999, Pages 2081-2084

  Sheu, J K ^a   Su, Y K ^a   Chi, G C ^b   Jou, M J ^c   Liu, C C ^c   Chang, C M ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c EPISTAR CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; OHMIC CONTACTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; TUNNEL JUNCTIONS;

CONTACT RESISTANCE; GALLIUM NITRIDE; INDIUM TIN OXIDE; MICROSCOPIC INTERFACIAL REACTION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033225346     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00177-X     Document Type: Article

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