Ultra-low resistive ohmic contacts on n-GaN using Si implantation

Applied Physics Letters

Volumn 70, Issue 4, 1997, Pages 464-466

  Burm, Jinwook ^a   Chu, Kenneth ^a   Davis, William A ^a   Schaff, William J ^a   Eastman, Lester F ^a   Eustis, Tyler J ^b  

^a Cornell University   (United States)

^b Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003337069     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118182     Document Type: Article

References (14)

1. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys. 1 73, L212 (1989).
2. S. Nakamura, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 1 32, L8 (1992).
3. M. A. Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson, Appl. Phys. Lett. 63, 1214 (1993).
4. M. A. Khan, J. N. Kuznia, D. T. Olson, W. J. Schaff, J. Burm, and M. S. Shur, Appl. Phys. Lett. 65, 1121 (1994).
5. S. C. Binari, L. B. Rowland, G. Keiner, W. Kruppa, H. B. Dietrich, K. Doverspike, and D. K. Gaskill, International Symposium on Compound Semiconductor, San Diego, 1994, p. 459.
6. A. Bykhovski, B. Gelmont, M. Shur, and A. Khan, J. Appl. Phys. 77, 1616 (1995).
7. J. S. Foresi and T. D. Moustakas, Appl. Phys. Lett. 62, 2859 (1993).
8. M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, and H. Morkoç, Appl. Phys. Lett. 64, 1003 (1994).
9. Z. Fan, S. N. Mohammad, W. Kim, Ö. Aktas, A. E. Botchkarev, and H. Morkoç, Appl. Phys. Lett. 68, 1672 (1996).
10. J. C. Zolper, R. J. Shul, A. G. Baca, R. G. Wilson, S. J. Pearton, and R. A. Stall, Appl. Phys. Lett. 68, 2273 (1996).
11. J. S. Chan, N. W. Cheung, L. Schloss, E. Jones. W. S. Wong, N. Newman, X. Liu, E. R. Weber, A. Grossman, and M. D. Rubin, Appl. Phys. Lett. 68, 2702 (1996).
12. J. F. Ziegler, TRansport of Ions in Matter (TRIM), ver. 92.12, IBM-Research, Yorktown, NY, 1992.
13. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 304.
14. M. W. Cole, D. W. Eckart, W. Y. Ran, R. L. Pfeffer, T. Monahan, F. Ren, C. Yuan, R. A. Stall, S. J. Pearton, Y. Li, and Y. Lu, J. Appl. Phys. 80, 278 (1996).