Reaction of aluminum-on-titanium bilayer with GaN: influence of the Al:Ti atomic ratio

Journal of Electronic Materials

Volumn 28, Issue 8, 1999, Pages 949-954

  Gasser, S M ^a   Kolawa, E ^a   Nicolet, M A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CHEMICAL REACTIONS; PHASE TRANSITIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROMETRY; SURFACE ROUGHNESS; TEMPERATURE; TITANIUM; TITANIUM NITRIDE; X RAY DIFFRACTION ANALYSIS;

ATOMIC RATIO; BACKSCATTERING SPECTROMETRY; HILLOCKS; METAL CONTACTS; SOLID STATE REACTION;

OHMIC CONTACTS;

EID: 0033357633     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0202-z     Document Type: Article

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