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Applied Physics Letters

Volumn 77, Issue 3, 2000, Pages 382-384

Low resistance ohmic contacts to n-GaN and n-AlGaN using NiAl

(5) Ingerly, D B a Chen, Y b William, R S b Takeuchi, T c Chang, Y A a

a University of Wisconsin Madison (United States)

b HEWLETT PACKARD LABORATORIES (United States)

c AGILENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000135817 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.126983 Document Type: Article

Times cited : (17)

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