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Journal of Electronic Materials
Volumn 30, Issue 5, 2001, Pages 532-537
Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature
(4)
Lin, Y J
a
Lee, H Y
a
Hwang, F T
a
Lee, C T
a
a
NATIONAL CENTRAL UNIVERSITY
(
Taiwan
)
Author keywords
Gallium nitride; Ohmic contacts; Specific contact resistance; Surface treatment
Indexed keywords
ALLOYING; HALL EFFECT; LOW TEMPERATURE OPERATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; SURFACE TREATMENT;
LOW RESISTIVE OHMIC CONTACT; LOW TEMPERATURE ALLOYS; METAL DEPOSITION;
GALLIUM NITRIDE;
EID
:
0035331470
PISSN
:
03615235
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1007/s11664-001-0094-z
Document Type
:
Article
Times cited : (
28
)
References (
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