Ti/Ni ohmic contacts to n-type gallium nitride

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 292-295

  Vassilevski, K V ^a   Rastegaeva, M G ^b   Babanin, A I ^a,b   Nikitina, I P ^a,b   Dmitriev, V A ^a,b  

^a Cree Research EED   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Dry etching; Gallium nitride; Ohmic contact

Indexed keywords

CURRENT DENSITY; MASKS; NICKEL; NITRIDES; OHMIC CONTACTS; PLASMA ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; THERMODYNAMIC STABILITY; TITANIUM;

CHEMICAL STABILITY; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037814795     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01870-3     Document Type: Article

References (7)

1. J. Brown, J. Ramer, M. Banas, L.F. Lester, Malloy and S.D. Hersee, MRS 1995 Fall Meeting Boston, USA, AA13.6, 1995.
2. L.L. Smith, Bremser, E.P. Carlson, T.W. Weeks, Jr., Y. Huang, MJ. Kim, Carpenter and R.F. Davis, MRS 1995 Fall Meeting Boston, USA, AAA13.7, 1995.
3. Y. Wu, W. Jiang, B. Keller, D. Kapolnek, S. Denbaars, U. Mishra, Topical workshop on III-V nitrides, Abstr.-Nagoya, D-4, 1995.
4. S.C. Binari, Topical workshop on III-V nitrides, Abstr.-Nagoya, E-2, 1995.
5. M.E. Lin, Z. Ma, F.Y. Huang, Z. Fan, L.H. Allen and H. Morkoc, Appl. Phys. Lett., 64 (1994) 1003.
6. K.V. Vassilevski, V.E. Sizov, A.I. Babanin, Inst. Phys. Conf. Ser. 142, IOP, 1996, p. 1027.
7. G. Boberg, L. Stolt, P.A. Tove and H. Norde, Phys. Scr., 24 (1981) 405-407.