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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 362-365

Thermal stability of WSix and W ohmic contacts on GaN

(11) Cao, X A a Pearton, S J a Donovan, S M a Abernathy, C R a Ren, F a Zolper, J C b Cole, M W c Zeitouny, A d Eizenberg, M d Shul, R J e Baca, A G e

a University of Florida (United States)

b OFFICE OF NAVAL RESEARCH (United States)

c U S ARMY RESEARCH LABORATORY (United States)

d TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

e SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ION IMPLANTATION; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY; TUNGSTEN; TUNGSTEN ALLOYS;

CONTACT METALLIZATION; THREADING; TUNGSTEN SILICIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033528901 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(98)00351-1 Document Type: Article

Times cited : (3)

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