Microstructure, electrical properties, and thermal stability of Ti-based ohmic contacts to n-GaN

Journal of Materials Research

Volumn 14, Issue 3, 1999, Pages 1032-1038

  Smith, L L ^a,c   Davis, R F ^a   Liu, R J ^b   Kim, M J ^b   Carpenter, R W ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; COMPOSITION EFFECTS; CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; INTERFACES (MATERIALS); OHMIC CONTACTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY; TITANIUM NITRIDE;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0033096748     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0137     Document Type: Article

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