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Volumn 313-314, Issue , 1998, Pages 745-750
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Spectroscopic ellipsometry measurements of AlxGa1-xN in the energy range 3-25 eV
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Author keywords
AlGaN; Aluminum nitride; Ellipsometry; Gallium nitride; Optical properties; Vacuum ultraviolet
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Indexed keywords
ELECTRON TRANSITIONS;
ELLIPSOMETRY;
FILM GROWTH;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
NITRIDES;
OPTICAL PROPERTIES;
SEMICONDUCTING GALLIUM COMPOUNDS;
SYNCHROTRON RADIATION;
ULTRAVIOLET SPECTROSCOPY;
ALUMINUM GALLIUM NITRIDE;
ALUMINUM NITRIDE;
GALLIUM NITRIDE;
SPECTROSCOPIC ELLIPSOMETRY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
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EID: 0031998227
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(97)00990-5 Document Type: Article |
Times cited : (69)
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References (20)
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