Characteristics of [formula omitted] Schottky diodes deposited by reactive magnetron sputtering

Journal of Applied Physics

Volumn 85, Issue 8, 1999, Pages 4238-4242

  Dimitriadis, C A ^a   Lee, J I ^a   Patsalas, P ^b   Logothetidis, S ^b   Tassis, D H ^b   Brini, J ^a   Kamarinos, G ^a  

^a Grenoble INP Phelma   (France)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC DENSITY OF STATES; ELLIPSOMETRY; HOLE TRAPS; MAGNETRON SPUTTERING; SILICON WAFERS; TITANIUM NITRIDE;

HOOGE PARAMETER;

SCHOTTKY BARRIER DIODES;

EID: 0032621465     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.370336     Document Type: Article

References (32)

1. M. Wittmer and H. Melchior, Thin Solid Films THSFAP 93, 397 (1982).
2. M. Wittmer, J. Vac. Sci. Technol. A JVTAD6 3, 1797 (1985).
3. T. Hara, A. Yamanoue, H. Iio, K. Inoue, G. Washidzu, and S. Nakamura, Jpn. J. Appl. Phys., Part 1 JAPNDE 30, 1447 (1991).
4. Y. Omura, H. Inokawa and K. Izumi, J. Mater. Res. JMREEE 6, 1238 (1991).
5. W. Cheung, H. von Seefeld, M. A. Nicolet, F. Ho, and P. Iles, J. Appl. Phys. JAPIAU 52, 4297 (1981).
6. J. C. Francois, G. Chassaing, P. Gravier, R. Pierrisnard, and A. M. Bonnot, Thin Solid Films THSFAP 127, 205 (1985).
7. R. C. Glass, L. M. Spellman, S. Tanaka, and R. F. Davis, J. Vac. Sci. Technol. A JVTAD6 10, 1625 (1992).
8. C. A. Dimitriadis, S. Logothetidis, and Alexandrou, Appl. Phys. Lett. APPLAB 66, 502 (1995).
9. S. Logothetidis, I. Alexandrou, and A. Popadopoulos, J. Appl. Phys. JAPIAU 77, 1043 (1995).
10. J. I. Lee, J. Brini, G. Kamarinos, C. A. Dimitriadis, S. Logothetidis, and P. Patsalas, International Conference on Solid Films and Surface-9, Copenhagen, 5-10 July 1998.
11. T. G. M. Klienpenning, Solid-State Electron. SSELA5 22, 121 (1979).
12. M.-Y. Luo, G. Bosman, A. van der Ziel, and L. L. Hench, IEEE Trans. Electron Devices IETDAI 35, 1351 (1988).
13. S. T. Hsu, IEEE Trans. Electron Devices IETDAI ED-17, 496 (1970).
14. S. T. Hsu, IEEE Trans. Electron Devices IETDAI ED-18, 882 (1971).
15. D. E. Aspnes, Thin Solid Films THSFAP 89, 249 (1982).
16. S. Logothetidis and M. Gioti, Mater. Sci. Eng., B MSBTEK 46, 119 (1997).
17. J. I. Lee, J. Brini, and C. A. Dimitriadis, Electron. Lett. ELLEAK 34, 1268 (1998).
18. S. Logothetidis, E. I. Meletis, and G. Kourouklis, J. Mater. Res. (in press).
19. S. Logothetidis and A. Barborica, Microelectron. Eng. MIENEF 33, 309 (1997).
20. E. L. Wall, Solid-State Electron. SSELA5 19, 389 (1976).
21. G. S. Oehrlein, Mater. Sci. Eng., B MSBTEK 4, 441 (1989).
22. D. Bauza, C. Mallardeau, and Y. Morand, Mater. Sci. Eng., B MSBTEK 4, 387 (1989).
23. D. Bauza and G. Pananakakis, J. Appl. Phys. JAPIAU 69, 3357 (1991).
24. D. Bauza, J. Appl. Phys. JAPIAU 73, 1858 (1993).
25. F. D. Auret, M. Nel, and N. A. Bojarczuk, J. Vac. Sci. Technol. B JVTBD9 4, 1168 (1986).
26. O. Paz, F. D. Auret, and J. F. Whote, J. Electrochem. Soc. JESOAN 131, 1712 (1984).
27. F. N. Hooge, IEEE Trans. Electron Devices IETDAI 41, 1926 (1994).
28. G. Kousik, C. M. van Vliet, G. Bosman, and P. H. Handle, Adv. Phys. ADPHAH 34, 663 (1985).
29. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
30. O. Jäntsch, IEEE Trans. Electron Devices IETDAI ED-34, 1100 (1987).
31. L. Bess, Phys. Rev. PHRVAO 91, 1569 (1953).
32. J. I. Lee, J. Brini, A. Chovet, and C. A. Dimitriadis, Solid State Electron, (submitted).