Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing

Semiconductor Science and Technology

Volumn 15, Issue 6, 2000, Pages 585-588

  Tan, L S ^a   Prakash, S ^a   Ng, K M ^a   Ramam, A ^a   Chua, S J ^a   Wee, A T S ^a   Lim, S L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; ELECTRIC CONDUCTIVITY; ENERGY DISPERSIVE SPECTROSCOPY; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE; LOW TEMPERATURE ANNEALING;

OHMIC CONTACTS;

EID: 0033685888     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/6/317     Document Type: Article

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