SCOPUS 정보 검색 플랫폼

Materials Science and Engineering R: Reports

Volumn 17, Issue 4-5, 1996, Pages 147-206

Nanoscale characterization of semiconductor materials and devices using scanning probe techniques

(1) Yu, Edward T a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

Scanning probe techniques; Semiconductor materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON SPECTROSCOPY; EPITAXIAL GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR METAL BOUNDARIES; ULSI CIRCUITS;

ATOMIC SCALE CHARACTERIZATION; EPITAXIAL LAYER STRUCTURE; NANOSCALE CHARACTERIZATION; SCANNING PROBE MICROSCOPY;

SEMICONDUCTOR MATERIALS;

EID: 0030287211 PISSN: 0927796X EISSN: None Source Type: Journal
DOI: 10.1016/S0927-796X(96)00197-0 Document Type: Review

Times cited : (27)

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