Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 362-366

  Venables, D ^a   Jain, H ^a   Collins, D C ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001705001     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589811     Document Type: Review

References (7)

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5. D. Venables and D. M. Maher, Proceedings 9th International Conference on Microscopy of Semiconducting Materials, edited by A. G. Cullis and A. E. Staton-Bevan (Institute of Physics, Bristol, UK, 1995), p. 605.
6. M. Kump and A. C. Diebold, 1D/2D Dopant Metrology Round-Robin Comparison Report, SEMATECH, Nov. 1995.
7. A. C. Diebold, M. R. Kump, J. J. Kopanski, and D. G. Seiler, J. Vac. Sci. Technol. B 14, 196 (1996).