Model database for determining dopant profiles from scanning capacitance microscope measurements

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 463-470

  Marchiando, J F ^a   Kopanski, J J ^a   Lowney, J R ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CAPACITANCE MEASUREMENT; COMPUTER APPLICATIONS; FINITE ELEMENT METHOD; LAPLACE TRANSFORMS; MATHEMATICAL MODELS; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

SCANNING CAPACITANCE MICROSCOPE MEASUREMENTS; SECONDARY ION MASS SPECTROSCOPY MEASUREMENTS;

MICROSCOPIC EXAMINATION;

EID: 0031655130     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589831     Document Type: Article

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