Two-dimensional dopant profiling of a 60 nm gate length nMOSFET using scanning capacitance microscopy

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 555-558

  Timp, W ^a   O'Malley, M L ^a   Kleiman, R N ^a   Garno, J P ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC POTENTIAL; GATES (TRANSISTOR); MICROSCOPIC EXAMINATION; SEMICONDUCTOR DOPING;

SCANNING CAPACITANCE MICROSCOPY;

MOSFET DEVICES;

EID: 0032265856     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)