Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 471-475

  Neogi, Suneeta S ^a   Venables, David ^b   Na, Zhiyong ^a   Maher, Dennis M ^b  

^a INTEL CORPORATION   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004993199     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589832     Document Type: Article

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