Two-dimensional carrier profiling of InP structures using scanning spreading resistance microscopy

Applied Physics Letters

Volumn 73, Issue 15, 1998, Pages 2155-2157

  De Wolf, P ^a   Geva, M ^a   Hantschel, T ^a   Vandervorst, W ^a   Bylsma, R B ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; ELECTRIC CURRENT MEASUREMENT; MULTILAYERS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SURFACE PROPERTIES; TWO DIMENSIONAL;

CARRIER DISTRIBUTION; SCANNING SPREADING RESISTANCE MICROSCOPY;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032511654     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122408     Document Type: Article

References (6)

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2. Proceedings of the 4th Int. Conf. on the Measurement, Characterization and modeling of Ultra-Shallow Doping Profiles, Raleigh NC, 1997, J. Vac. Sci. Technol. B 16, 259 (1998).
3. P. De Wolf, Ph.D. dissertation, KU Leuven, 1998.
4. T. Hantschel, P. De Wolf, T. Trenkler, and W. Vandervorst, Proc. Micromach. Microfabr. (to be published).
5. Ph. Niedermann, W. Hänni, N. Blanc, R. Cristoph, and J. Burger, J. Vac. Sci. Technol. A 14, 1233 (1996).
6. T. Clarysse, M. Caymax, P. De Wolf, T. Trenkler, W. Vandervorst, J. S. McMurray, J. Kim, C. C. Williams, J. G. Clark, and G. Neubauer, J. Vac. Sci. Technol. B 16, 394 (1996).