Two-dimensional dopant profiling by scanning capacitance microscopy

Annual Review of Materials Science

Volumn 29, Issue , 1999, Pages 471-504

  Williams, C C ^a  

^a UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; ELECTRIC VARIABLES MEASUREMENT; MATHEMATICAL MODELS; MOS CAPACITORS; PROBES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; TRANSISTORS;

CAPACITANCE VOLTAGE RELATIONS; DOPANT; NANOMETER; QUANTITATIVE JUNCTION MEASUREMENT; SCANNING CAPACITANCE MICROSCOPY; ULSI DEVICES;

MICROSCOPIC EXAMINATION;

EID: 0033297834     PISSN: 00846600     EISSN: None     Source Type: Book    
DOI: 10.1146/annurev.matsci.29.1.471     Document Type: Book

References (55)

1. The National Technology Roadmap for Semiconductors. 1997., San Jose, CA: Semiconductor Ind. Assoc.
2. nd ed.
3. Subrahmanyan R, Duane M. 1994. Proc. Symp. Diagnostic Techniques for Semiconductor Materials and Devices, ed. DK Schroder, JL Benton, P Rai-Choudhury, pp. 65-77, Pennington, NJ: Electrochem. Soc.
4. Brews JR, Zhoub Z, Buxo J. 1995. Microelectron. Eng. 28:155-61
5. Subrahmanyan R. 1992. J. Vac. Sci. Technol. B 10:358
6. Diebold AC, Kump M, Kopanski JJ, Seiler DG. 1994. See Ref. 3, pp. 78-96
7. Bullis WM, Seiler DG, Diebold AC, eds. 1996. Semiconductor Characterization, Present Status and Future Needs, Woodbury, NY: Am. Inst. Phys.
8. Proc. 4th Int. Workshop Measurement, Characterization and Modeling of Ultrashallow Doping Profiles in Semiconductors, 1998. J. Vac Sci. Technol. B 16(1): 259-480
9. Seiler DG, Diebold AC, Bullis WM, Shaffner JJ, McDonald J, Walters EJ, eds. 1998. Proc. 1998 Int. Conf. Characterization and Metrology for ULSI Technology, pp. 617-95. Woodbury, NY: Am. Inst. Phys.
10. Matey JR, Blanc J. 1985. J. Appl. Phys. 57:1437
11. Bugg CD, King PJ. 1998. J. Phys. E 21: 147
12. Kleinknecht HP, Sandercock JR, Meier H. 1998. Scanning Microsc. 2:1839
13. Williams CC, Hough WP, Rishton SA. 1939. Appl. Phys. Lett. 55:203
14. Barrett RC, Quate CF. 1991. J. Appl. Phys. 70:2725
15. Palmer RC, Denlinger EJ, Kawamoto H. 1982. RCA Rev. 43:194
16. Nicollian EH, Brews JR. 1982. MOS Physics and Technology, New York: Wiley
17. Huang Y, Williams CC. 1994. J. Vac. Sci. Technol. B 12(1):369
18. Nakagiri N, Yamamoto T, Sugimura H. 1996. J. Vac. Sci. Technol. B 14(2):887
19. Williams CC, Slinkman J, Hough WP, Wickramasinghe HK. 1989. Appl. Phys. Lett. 55:1662
20. Williams CC, Slinkman J, Hough WP, Wickramasinghe HK. 1990. J. Vac. Sci. Technol. A 8:895
21. Huang Y, Williams CC, Slinkman J. 1995. Appl. Phys. Lett. 66:344
22. Kopanski JJ, Marchiando JR, Lowney JR. 1996. J. Vac. Sci. Technol. B 14(1): 242
23. Born A, Hahn C, Lohndorf M, Wadas A, Witt Ch, Wiesendanger R. 1996. J. Vac. Sci. Technol. B 14(6):3625
24. Yamamoto T, Suzuki Y, Miyashita M, Sugimura H, Nakagiri N. 1992. Jpn. J. Appl. Phys. 36:1922
25. Slinkman J, Williams CC, Abraham DW, Wickramasinghe HK. 1990. Tech. Dig. (Cat. No. 90CH2865-4). 986:73-76
26. Neubauer G, Erickson A, Williams CC, Kopanski JJ, Rodgers M, Adderton D. 1996. J. Vac. Sci. Technol. B 14(1):426
27. Huang Y, Williams CC, Smith H. 1996. J. Vac. Sci. Technol. B 14(1):433
28. Erickson A, Sadwick L, Neubauer G, Kopanski J, Adderton D, Rogers M. 1996. J. Electron. Mater. 25(2):301
29. Tomiye H, Yao T, Kawami H, Hayashi T. 1997. Appl. Phys. Lett. 69:4050
30. Ukraintsev VA, Potts FR, Wallace RM, Magel LK, Edwards H, Chang M-C. 1998. See Ref. 5a, p. 736
31. Zavyalov V. 1999. Rev. Sci. Inst. 70(1): 158
32. Yamamoto T, Suzuki Y, Miyashita M, Sugirmura H, Nakagiri N. 1997. J. Vac. Sci. Technol. B 15(4):1547
33. McMurray JS, Kim J, Williams CC. 1997. J. Vac. Sci. Technol. B 15(4):1011
34. Kopanski JJ, Marchiando JF, Lowney JR. 1997. Mater. Sci. Eng. B 44:46
35. Marchiando U, Kopanski JJ, Lowney JR. 1998. J. Vac. Sci. Technol B 16(1):463
36. McMurray JS, Williams CC. 1998. See Ref. 5a, p. 731
37. Deleted in proof
38. Huang Y, Williams CC. 1996. J. Vac. Sci. Technol. B 14(1):433
39. Huang Y, Williams CC, Wendman MA. 1996. J. Vac. Sci. Technol. A 14(3):1168
40. Erickson A, Sadwick L, Neubauer G, Kopanski J, Adderton D, Rogers M. 1996. J. Electron. Mater 25(2):301
41. Neubauer G, Erickson A, Williams CC, Kopanski JJ, Rodgers M, Adderton D. 1996. J Vac. Sci. Technol. B 14(1):426
42. McMurray JS, Kim J, Williams CC, Slinkman J. 1998. J. Vac. Sci. Technol. B 16(1):344
43. Kim J, McMurray JS, Williams CC, Slinkman J. 1998. J. Appl. Phys. 84:1305
44. Ukraintsev VA, List RS, Chang M-C, Edwards H, Machale CF, et. al. 1998. See Ref. 5a, p. 741
45. Kopanski JJ, Marchiando JF, Lowney JR. 1996. J. Vac. Sci. Technol. B 14(1):242
46. Kopanski JJ, Marchiando JF, Berning DW, Alvis R, Smith HE. 1998. J. Vac. Sci. Technol. B 16(1):339
47. Kleiman RN, O'Malley ML, Baumann FH, Garno JP, Timp GL. 1997. IEDM Technol. Dig. 691 pp.
48. Kleiman RN, O'Malley ML, Baumann FH, Garno JP, Timp WG, Timp GL. 1998. Symp. VLSI Technol. Dig. 138 pp.
49. O'Malley ML, Timp GL, Moccio SV, Garno JP, Keiman RN. 1999. App. Phys. Lett. In press
50. Kopanski JJ, Marchiando JF, Albers J, Rennex BG. 1998. See Ref. 5a, p. 725
51. Edwards H, McGlothlin R, Martin RS, U E, Gribelyuk M, et al. 1998. Appl. Phys. Lett. 72:698
52. Zavyalov VV, McMurray JS, Williams CC. 1999. J. Appl. Phys. In press
53. Li Y, Nxumalo JN, Thomson DJ. 1998. J. Vac. Sci. Technol. B 16(1):457
54. Kang CJ, Kim CK, Lera JD, Kuk Y, Mang KM, Lee JG, Suh KS, Williams CC. 1997. Appl. Phys. Lett. 71:1546
55. Zavyalof VV, McMurray J-S, Williams CC. 1999. Proc. 5th Int. Wksp. Measurement, Characterization, Modeling of Ultrashallow Doping Profiles in Semiconductors. Submitted