Direct comparison of two-dimensional dopant profiles by scanning capacitance microscopy with TSUPREM4 process simulation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 344-348

  McMurray, J S ^a   Kim, J ^a   Williams, C C ^a   Slinkman, J ^b  

^a UNIVERSITY OF UTAH   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; ATOMIC FORCE MICROSCOPY; BOUNDARY CONDITIONS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON WAFERS;

SCANNING CAPACITANCE MICROSCOPY; TWO DIMENSIONAL DOPANT PROFILES;

MICROSCOPIC EXAMINATION;

EID: 0031706388     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589808     Document Type: Review

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