Verification of "lateral secondary ion mass spectrometry" as a method for measuring lateral dopant dose distributions in microelectronics test structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 386-393

  Von Criegern, Rolf ^a   Jahnel, Franz ^a   Lange Gieseler, Rosa ^a   Pearson, Peter ^b   Hobler, Gerhard ^c   Simionescu, Alexander ^c  

^a SIEMENS AG   (Germany)

^b GEC Marconi Materials Technology Ltd   (United Kingdom)

^c VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042562925     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589816     Document Type: Article

References (3)

1. R. von Criegern, F. Jahnel, M. Bianco, and R. Lange-Gieseler, J. Vac. Sci. Technol. B 12, 234 (1994).
2. R. von Criegern, M. Franosch, W. Hösler, F. Jahnel, R. Lange-Gieseler, and I. Weitzel, in Proceedings of the 10th International Conference on Secondary Ion Mass Spectrometry, SIMS X (Wiley, New York, 1997), p. 299.
3. G. Hobler and S. Selberherr, IEEE Trans. Comput.-Aided Des. 8, 450 (1989).