Direct comparison of cross-sectional scanning capacitance microscope dopant profile and vertical secondary ion-mass spectroscopy profile

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 433-436

  Huang, Y ^a   Williams, C C ^a   Smith, H ^b  

^a UNIVERSITY OF UTAH   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001352949     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588489     Document Type: Review

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