Brief measurement of diffusion profiles of deep impurities by moving schottky contact

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 6 SUPPL. A, 1996, Pages 3686-3687

  Morooka, Masami ^a   Fukasako, Shinya ^a  

^a FUKUOKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Deep impurity; Diffusion profile; DLTS; ICTS; Impurity diffusion; Schottky contact; Schottky electrode; Si:Au

Indexed keywords

CAPACITANCE MEASUREMENT; DIFFUSION; ELECTRIC CONTACTS; GOLD; IMPURITIES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON;

DEEP IMPURITIES; DIFFUSION PROFILE; IMPURITY DIFFUSION; ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY; SCHOTTKY CONTACT; SCHOTTKY ELECTRODES;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 0030167740     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3686     Document Type: Article

References (6)

1. D. V. Lang: J. Appl. Phys. 45 (1974) 3023.
2. Y. Zohta and M. O. Watanabe: J. Appl. Phys. 53 (1982) 1809.
3. H. Okushi and Y. Tokumaru: Jpn. J. Appl. Phys. 19 (1980) L335.
4. M. Morooka, H. Tomokage and M. Yoshida: Jpn. J. Appl. Phys. 27 (1988) 1778.
5. H. Tomokage, T. Miyamoto, M. Morooka and M. Yoshida: Jpn. J. Appl. Phys. 25 (1986) 916.
6. M. Takahashi, M. Morooka and F. Hashimoto: Jpn. J. Appl. Phys. 33 (1994) 1713.