Depth dependent carrier density profile by scanning capacitance microscopy

Applied Physics Letters

Volumn 71, Issue 11, 1997, Pages 1546-1548

  Kang, C J ^a   Kim, C K ^a   Lera, J D ^a   Kuk, Y ^a   Mang, K M ^b   Lee, J G ^b   Suh, K S ^c   Williams, C C ^d  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ETCHING; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

BEAM DEFLECTION METHOD; ELECTRON BEAM EVAPORATION; SCANNING CAPACITANCE MICROSCOPY;

ATOMIC FORCE MICROSCOPY;

EID: 0031571922     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119961     Document Type: Article

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