Strong effect of dopant concentration gradient on etching rate

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 476-480

  Ukraintsev, V A ^a   McGlothlin, R ^a   Gribelyuk, M A ^a   Edwards, Hal ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012751669     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589833     Document Type: Article

References (31)

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31. -3 s.