Junction metrology by cross-sectional atomic force microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 452-456

  Alvis, Roger ^a   Mantiply, Bryant ^b   Young, Michael ^c  

^a ADVANCED MICRO DEVICES   (United States)

^b CALIFORNIA POLYTECHNIC STATE UNIVERSITY   (United States)

^c VEECO INSTRUMENTS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011453129     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588493     Document Type: Article

References (10)

1. The National Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, 1994), p. 49.
2. Proceedings of the Second International Workshop on the Measurement and Characterization of Ultra Shallow Doping Profiles in Semiconductors (MCNC, Research Triangle Park, NC, 1993), Vols. I and II.
3. G. Neubauer, M. L. Dass, and T. Johnson, in Materials Research Society Symposium Proceedings (Materials Research Society, Pittsburgh, 1992), Vol. 265, pp. 283-288.
4. S. Thomas, Scanning Electron Microsc. 4, 1585 (1983).
5. R. Alvis and B. Tracy, in Proceedings of the Microscopy Society of America, 52nd Annual Meeting, edited by G. W. Bailey and A. J. Garratt-Reed (San Francisco Press, San Francisco, 1994), pp. 836 and 837.
6. H. Robbins and B. J. Schwartz, Electrochem. Soc. 106, 505 (1959).
7. R. Alvis, S. Luning, L. Thompson, R. Sinclair, and P. Griffin, in Proceedings of the 3rd international Workshop on the Measurement and Characterization of Ultra Shallow Doping Profiles in Semiconductors, 1995, edited by Zavi Subrahmanyan, Carlton Osburn, and P. Rai-Choudhury (MCNC, Research Triangle Park, NC, 1995), pp. 7.1-7.11.
8. AMD internal report (unpublished).
9. H. Martin and H. Wickramasignhe, Appl. Phys. Lett. 64, 9 (1994).
10. R. Alvis, S. Luning, L. Thompson, R. Sinclair, and P. Griffin, in Ref. 7, pp. 7.1-7.11.