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Volumn 69, Issue 11, 1996, Pages 1593-1595

Mapping electrically active dopant profiles by field-emission scanning electron microscopy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001336264     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117041     Document Type: Article
Times cited : (46)

References (12)
  • 7
    • 5644297351 scopus 로고
    • Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors
    • For example, see Workshops on Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, J. Vac. Sci. Technol. B 10, 288 (1992); 12, 165 (1994); 14, 191 (1996).
    • (1992) J. Vac. Sci. Technol. B , vol.10 , pp. 288
  • 8
    • 5644220403 scopus 로고
    • For example, see Workshops on Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, J. Vac. Sci. Technol. B 10, 288 (1992); 12, 165 (1994); 14, 191 (1996).
    • (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 165
  • 9
    • 5644251888 scopus 로고    scopus 로고
    • For example, see Workshops on Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, J. Vac. Sci. Technol. B 10, 288 (1992); 12, 165 (1994); 14, 191 (1996).
    • (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 191


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.