The impact of the substrate preamorphisation on the electrical performances of P+/N silicon junction diodes

Microelectronics Reliability

Volumn 37, Issue 1, 1997, Pages 53-60

  Minondo, M ^a   Boussey, J ^b   Kamarinos, G ^b  

^a STMICROELECTRONICS   (Italy)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS MATERIALS; CRYSTAL DEFECTS; CURRENT DENSITY; ELECTRIC SPACE CHARGE; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BORON FLUORINE IMPLANTATION; NOISE SPECTRAL DENSITY;

SEMICONDUCTOR DIODES;

EID: 0030872617     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00238-7     Document Type: Article

References (7)

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4. M.C. Oszturk, J.J. Wortman, C.M. Osburn, A. Ajmera, G.A. Rozgonyi, E. Frey, W.K. Chu and C. Lee,"Optimization of the germanium preamorphisation conditions for shallow junction formation", IEEE Trans. on Electron Devices, Vol. 35(5), 1988, pp. 659-668
5. M. Minondo, Thèse Docteur Ingénieur de l'Institut National Polytechnique de Grenoble, Nov. 1994
6. J. A. Ayeres, S.D. Brotherton, J.B. Clegg and A. Gilll, "Comparison of electrical defects in Ge+ and Si+ preamorphized BF2 implanted silicon", Journal of Applied Physics, Vol. 62(9), 1987, pp. 3628-3632,
7. G. Kamarinos, A. Mounib, C. Jaussaud and M Minondo, "Noise Analysis of very shallow junction in silicon", 13th International conference on Noise in Phys. Syst. and 1/f Fluctuations, ICNF'95, Proceeding edited by V. Bareikis and R. Katilius, World Scientific (N.Y.), 1995, pp. 589-592