Influence of depth position of end-of-range defects on current-voltage and noise characteristics of shallow (p+/n) junctions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 4 A, 1997, Pages 1999-2003

  Alquier, Daniel ^a   Van Haaren, Bart ^a   Bergaud, Christian ^a,b   Plana, Robert ^a   Graffeuil, Jacques ^a   Martinez, Augustin ^a,c  

^a LAAS CNRS   (France)

^b UNIVERSITY OF TOKYO   (Japan)

^c INSA   (France)

Author keywords

Amorphization; Electrical properties; EOR defects; Noise measurements; RTA; Shallow (p+ n) junctions; Silicon

Indexed keywords

END OF RANGE (EOR) DEFECTS; LOW FREQUENCY (LF) NOISE MEASUREMENTS;

AMORPHIZATION; ANNEALING; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

SEMICONDUCTOR JUNCTIONS;

EID: 0031121496     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1999     Document Type: Article

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