1/f Noise in n-p-n GaAs/AlGaAs Heterojunction Bipolar Transistors: Impact of Intrinsic Transistor and Parasitic Series Resistances

IEEE Transactions on Electron Devices

Volumn 40, Issue 6, 1993, Pages 1148-1153

  Kleinpenning, Theo G M ^a   Holden, Anthony J ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b GEC Marconi Materials Technology Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

1/F NOISE; BASE/COLLECTOR CURRENTS; FORWARD BIAS; HETEROJUNCTION BIPOLAR TRANSISTORS (HBTS);

BIPOLAR TRANSISTORS;

EID: 0027608465     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.214742     Document Type: Article

References (9)

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