Excess noise sources due to defects in forward biased junctions

Solid State Electronics

Volumn 21, Issue 11-12, 1978, Pages 1425-1430

  Blasquez, G ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

SEMICONDUCTOR DEVICES;

EID: 0018039251     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(78)90219-8     Document Type: Article

References (24)

1. Noise due to generation and recombination of carriers in p-n junction transition regions
2. Noise and admittance of the generation—Recombination current involving SRH centers in the space-charge region of junction devices
3. Physical interpretation of the noise reduction for the generation—Recombination current due to SRH centers in the space-charge layer
4. Excess surface currents in p-n junctions and bipolar transistors
5. Leakage currents, surface current and 1/f noise in planar bipolar transistors
6. 1/f noise in gate-controlled planar silicon diodes
7. Effects of dislocations on the noise of planar p–n junctions†
8. Burst noise of silicon planar transistors
9. Noise sources identification in integrated circuits through correlation analysis
10. Reduction of popcorn noise in integrated circuits