Static and low-frequency noise characteristics of n+p junction diodes fabricated in different silicon substrates

Semiconductor Science and Technology

Volumn 10, Issue 7, 1995, Pages 1002-1008

  Simoen, E ^a   Vanhellemont, J ^a   Rotondaro, A L P ^a   Claeys, C ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CZOCHRALSKI GROWN WAFERS; HIGH LOW HIGH THERMAL PRETREATMENT; INTERSTITIAL OXYGEN CONTENT; LOW FREQUENCY NOISE;

CONCENTRATION (PROCESS); CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICA;

SEMICONDUCTING SILICON;

EID: 0029344529     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/10/7/017     Document Type: Article

References (34)

1. The concept of generation and recombination lifetimes in semiconductors
2. Origin of 1/f noise in bipolar transistors