Noise and lifetime measurements in Si p+-i-n power diodes

Solid State Electronics

Volumn 32, Issue 5, 1989, Pages 345-348

  Fang, P ^a   He, L ^a   van Rheenen, A D ^a   van der Ziel, A ^a   Peng, Q ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NOISE, SPURIOUS SIGNAL--MEASUREMENTS; SEMICONDUCTING SILICON--APPLICATIONS;

1/F NOISE; HOOGE PARAMETER; LIFETIME MEASUREMENTS; P-I-N DIODES; POWER DIODES; SHOT NOISE;

SEMICONDUCTOR DIODES;

EID: 0024668287     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(89)90121-4     Document Type: Article

References (8)

1. Noise in p-i-n junction diodes
2. 1/ƒ noise is no surface effect
3. The High Current Limit for Semiconductor Junction Devices