On the relationship between the bulk recombination lifetime and the excess 1/f noise in silicon p-n junction diodes

Solid State Communications

Volumn 98, Issue 11, 1996, Pages 961-963

  Simoen, E ^a   Vanhellemont, J ^a   Claeys, C ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

HIGH LIFETIME DIODES;

SEMICONDUCTOR DIODES;

EID: 0030172294     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00186-X     Document Type: Article

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