Analysis of n+ p silicon junctions with varying substrate doping concentrations made under ultraclean processing technology

Journal of Applied Physics

Volumn 81, Issue 3, 1997, Pages 1270-1288

  Aharoni, Herzl ^a,b   Ohmi, Tadahiro ^a   Oka, Mauricio Massazumi ^a   Nakada, Akira ^a   Tamai, Yukio ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005089428     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364442     Document Type: Article

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