Origin of 1/f Noise in Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 27, Issue 9, 1980, Pages 1753-1757

  Stoisiek, Michael ^a   Wolf, Dietrich ^a  

^a GOETHE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, BIPOLAR;

EID: 0019057275     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1980.20097     Document Type: Article

References (7)

1. A. van der Ziel, Proc. IEEE, vol. 58, pp. 1178-1206, 1970. D. Wolf, “1/f noise,” in Noise in Physical Systems. Berlin, New York: Springer, 1978, pp. 122-133.
2. E. R. Chenette, Proc. IRE, vol. 46, p. 1304, 1958. J. L. Plumb and E. R. Chenette, IEEE Trans. Electron. Devices, vol. ED-10, pp. 304-308, 1963.
3. A. L. McWhorther, “1/f noise and related surface effects in germanium,” Ph.D. dissertation, MIT Lincoln Lab., Lexington MA, Rep. 80, 1955. S. T. Hsu, Solid-State Electron., vol. 13, pp. 843-855, 1970. 3. C. Martin, D. Esteve, G. Blasquez, and J. M. Ribeyrol, Electron. Lett., vol. 6, pp. 128-129, 1970. F. Leuenberger, Electron. Lett., vol. 4, p. 280, 1968.
4. A. S. Grove, Physics and Technology of Semiconductor Devices. New York: Wiley, 1967, p. 298.
5. F. N. Hooge, Phys. B + C, vol. 83, pp. 14-23, 1976.
6. M. Stoisiek, “1/f-Rauschen in Bipolartransistoren,” Ph.D. dissertation, Universität Frankfurt am Main, Germany, 1979.
7. M. Stoisiek and D. Wolf, Solid-State Electron., to be published.