1/f noise in bipolar transistors

Journal of Physics D: Applied Physics

Volumn 18, Issue 1, 1985, Pages 77-91

  Green, C T ^a   Jones, B K ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

RECOMBINATION CURRENTS;

TRANSISTORS, BIPOLAR;

EID: 0021784606     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/18/1/011     Document Type: Article

References (28)

1. Effets d'un rayonnement ionisant sur les mécanismes de conduction et de bruit de fond basse fréquence des transistors bipolaires
2. On the theory of logorithmic silicon diodes
3. Noise due to generation and recombination of carriers in p-n junction transition regions
4. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
5. Origin of 1/f noise in bipolar transistors