Effects of Diffusion-Induced Dislocations on the Excess Low-Frequency Noise

IEEE Transactions on Electron Devices

Volumn 20, Issue 3, 1973, Pages 221-226

  Nishida, Masanori ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NOISE, SPURIOUS SIGNAL; SEMICONDUCTOR DEVICES - NOISE;

SEMICONDUCTOR DEVICES;

EID: 0015599921     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1973.17632     Document Type: Article

References (15)

1. L. Bess “Study of 1/f noise in semiconductor,” Phys. Rev., vol. 105, pp. 72–82, 1956.
2. L. Bess and L. S. Kisner “Investigation of 1/f noise spectra,” J. Appl. Phys., vol. 37, pp. 3457–3462, 1966.
3. L. Bess “Relative influence of mobility and minority carriers on excess noise in semiconductor filaments,” J. Appl., Phys., vol. 26, pp. 1377–1381, 1955.
4. C. T. Sah “A new semiconductor tetrode—The surface-potential controlled transistor,” Proc. IRE, vol. 49, pp. 1623–1634, Nov. 1961.
5. V. G. K. Reddi “Influence of surface conditions on silicon planar transistor current gain,” Solid-State Electron., vol. 10, pp. 05–334, 1967.
6. E. Sirtl and A. Adler, “Chromsaure-Flussaure ais spezifisches System zur Atzgruben-entrwicklung auf Silizium,” Z. Metallk., vol. 52, p. 527, 1961.
7. J. M. Fairfield, J. K. Howard, and G. H. Schwuttke “Stress effects in masking films on silicon,” J. Electrochem. Soc., vol. 6, pp. 110–113, 1968.
8. R. A. McDonald, G. G. Ehlenberger, and T. R. Huffman “Control of diffusion induced dislocations in phosphorus diffused silicon,” Solid-State Electron., vol. 9, pp. 807–812, 1966.
9. G. H. Schwuttke and J. M. Fairfield “Dislocations in silicon due to localized diffusion,” J. Appl. Phys., vol. 37, pp. 4394–4396, 1966.
10. M. Nishida “Distribution of surface state density related diffusion-induced dislocations near the junction formed by diffusion of phosphorus in silicon,” Japan. J. Appl. Phys., vol. 11, pp. 673–677, 1972.
11. E. M. Pell and G. M. Roe “Reverse current and carrier lifetime as a function of temperature in silicon junction diodes,” J. Appl. Phys., vol. 27, pp. 768–772, 1956.
12. C.-T. Sah, R. N. Noyce, and W. Shockley “Carrier generation and recombination in p-n junctions and p-n junction characteristics,” Proc. IRE, vol. 45, pp. 1228–1243, Sept. 1957.
13. R. N. Hall, “Electron-hole recombination in germanium,” Phys. Rev., vol. 87, p. 387, 1952.
14. W. Shockley and W. T. Read “Statics of the recombinations of holes and electrons,” Phys. Rev., vol. 87, pp. 835–843, 1952.
15. A. S. Grove and D. T. Fitzgerald “Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions,” Solid-State Electron., vol. 9, pp. 783–806, 1966.