A 1 /f noise technique to extract the oxide trap density near the conduction band edge of silicon

IEEE Transactions on Electron Devices

Volumn 36, Issue 9, 1989, Pages 1773-1782

  Jayaraman, Raj ^a   Sodini, Charles G ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; NOISE, SPURIOUS SIGNAL--MEASUREMENTS; OXIDES; SEMICONDUCTING SILICON--CHARGE CARRIERS;

1/F NOISE MEASUREMENT; FLUCTUATING TRAPPED CHARGE; NUMBER FLUCTUATION MODEL; OXIDE TRAPS MEASUREMENT; SILICON CONDUCTION BAND EDGE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024732795     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.34242     Document Type: Article

References (33)

1. O. Jantsch and B. Borchert, “Determination of interface state density especially at the band edges by noise measurements on MOSFETS,” Solid-State Electron., vol. 30, no. 10, p. 1013, 1987.
2. G. Abowitz, E. Arnold, and E. A. Leventhal, “Surface states and 1/f noise in MOS transistors,” IEEE Trans. Electron Devices, vol. ED-14, p. 775, 1967.
3. H. S. Fu and C. T. Sah, “Theory and experiments on surface 1/f noise,” IEEE Trans. Electron Devices, vol. ED-19, no. 2, p. 273, 1972.
4. A. L. McWhorter, “1/f noise and germanium surface properties,” in Semiconductor Surface Physics. Philadelphia: University of Pennsylvania Press, 1957, p. 207.
5. S. Christensson, I. Lundstrom, and C. Svensson, “Low frequency noise in MOS transistors—I. theory,” Solid-State Electron., vol. 11, p. 797, 1968.
6. N. R. Mantenna and R. C. Lucas, “Experimental study of flicker noise in MIS field effect transistors,” Electron. Lett., vol. 5, p. 607, 1969.
7. H. Katto, Y. Kamigaki, and Y. Itoh, “MOSFETs with reduced low frequency 1/f noise,” Japan. J. Appl. Phys., vol. 44, p. 243, 1975.
8. C. T. Sah and F. H. Hielscher, “Evidence of the surface origin of the 1/f noise,” Phys. Rev. Lett., vol. 17, pp. 956–958, 1966.
9. S. T. Hsu, “Surface state related 1/f noise in MOS transistors,” Solid-State Electron., vol. 13, pp. 1451–1459, 1970.
10. F. N. Hooge, “1/f noise,” Physica, vol. 83B, p. 14, 1976.
11. L. K. J. Vandamme, “Model for 1/f noise in MOS transistors biased in the linear region,” Solid-State Electron., vol. 23, p. 317, 1980.
12. F. M. Klaassen, “Characterization of low 1/f noise in MOS transistors,” IEEE Trans. Electron Devices, vol. ED-18, p. 887, 1971.
13. L. K. J. Vandamme and H. M. M. DeWard, “1/f noise model for MOST's biased in nonohmic region,” Solid-State Electron., vol. 23, p. 325, 1980.
14. F. N. Hooge and L. K. J. Vandamme, “Lattice scattering causes 1/f noise,” Phys. Lett., vol. 66A, p. 315, 1978.
15. R. P. Jindal and A. van der Ziel, “Phonon fluctuation model for flicker noise in elemental semiconductors,” J. Appl. Phys., vol. 52, p. 2884, 1978.
16. H. Mikoshiba, “1/f noise in n-channel silicon-gate MOS transistors,” IEEE Trans. Electron Devices, vol. ED-29, no. 6, p. 965, 1982.
17. C. Surya and T. Y. Hsiang, “Surface mobility fluctuations in metal-oxide-semiconductor field-effect transistors,” Phys. Rev., vol. 35, no. 12, p. 6343, 1987.
18. F. Grabowski, “Influence of the interface and of the channel volume on 1/f noise of MOS transistors biased in the linear region at strong inversion,” Solid-State Electron., vol. 31, no. 1, p. 115, 1988.
19. Z. Celik and T. Y. Hsiang, “Study of 1/f noise in N-MOSFET's: Linear region,” IEEE Trans. Electron Devices, vol. ED-32, no. 12, p. 2797, 1985.
20. γ noise in p-channel metal-oxide-semiconductor field-effect transistors at low drain bias,” Phys. Rev., vol. 33, no. 7, p. 4498, 1986.
21. γon gate bias in N-MOSFET's,” Solid-State Electron., vol. 30, no. 4, p. 419, 1987.
22. R. Jayaraman, Ph.D. dissertation, Dept. of Electrical Eng., Massachusetts Institute of Technology, 1988.
23. K. S. Ralls et al., “Discrete resistance switching in submicrometer silicon inversion layers: Individual interface traps and low frequency (1/f ?) noise,” Phys. Rev. Lett., vol. 52, no. 3, p. 228, 1984.
24. S. C. Sun and J. D. Plummer, “Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces,” IEEE Trans. Electron Devices, vol. ED-27, p. 1497, 1980.
25. E. Burstein and S. Lundquist, Tunneling Phenomena in Solids. New York: Plenum, 1969.
26. R. L. Liboff, Introducing Quantum Mechanics. Oakland, CA: Holden-Day, 1980, p. 232.
27. C. T. Sah, “Theory of low-frequency generation noise in junction-gate field-effect transistors,” Proc. IEEE, vol. 52, p. 795, 1964.
28. R. E. Burgess, “The statistics of charge carrier fluctuations in semiconductors,” Proc. Phys. Soc., vol. B69, p. 1020, 1956.
29. G. Reimbold, “Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states,” IEEE Trans. Electron Devices, vol. ED-31, no. 9. p. 1190, 1984.
30. N. W. Ashcroft and N. D. Mermin, Solid State Physics. Philadelphia: Holt, Rinehart, and Winston, 1976.
31. J. R. Brews, “Theory of the carrier-density fluctuations in an IGFET near threshold,” J. Appl. Phys., vol. 46, no. 5, p. 2181, 1975.
32. A. van der Ziel, “Some general relationships for flicker noise in MOSFETs,” Solid-State Electron., vol. 21, p. 623, 1978.
33. P. Tedrow and C. G. Sodini, “MIT CMOS process,” Tech. Rep., 1988.