Impact of silicon substrate, iron contamination and perimeter on saturation current and noise in n+ p diodes

Solid-State Electronics

Volumn 41, Issue 6, 1997, Pages 901-908

  Vandamme, L K J ^c   Vandamme, E P ^a   Dobbelsteen, J J ^b  

^a IMEC   (Belgium)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; IRON; SEMICONDUCTOR DEVICE MODELS; SILICON WAFERS; SPURIOUS SIGNAL NOISE; SUBSTRATES;

IRON CONTAMINATION; LOW FREQUENCY NOISE; SATURATION CURRENT;

SEMICONDUCTOR DIODES;

EID: 0031170670     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00023-3     Document Type: Article

References (21)

1. Slotboom, J. W., Theunissen, M. J. J. and Kock, A. J. R., IEEE Trans. Electron Devices, 1983, 4, 403.
2. Dobbelsteen, J. J., Master's Thesis, Technische Universiteit Eindhoven, 1989.
3. Simoen, E., Bosman, G., Vanhellemont, J. and Claeys, C., Appl. Phys. Lett., 1995, 66, 2507-2509.
4. Simoen, E., Vanhellemont, J., Rotondaro, A. L. P. and Claeys, C., Solid State Technol., 1995, 10, 1002-1008.
5. Dubuc, J. P., Simoen, E., Visna, P. and Claeys, C., Electronic Lett., 1995, 31, 1016-1017.
6. Simoen, E., Dubuc, J. P., Vanhellemont, J. and Claeys, C., Mat. Sci. Eng. B., 1996, 36, 179-182.
7. Kleinpenning, T. G. M., Physica B, 1980, 98, 289-299.
8. Kleinpenning, T. G. M., Physica B, 1983, 121, 81-88.
9. Kleinpenning, T. G. M., J. Vac. Sci. Technol., 1985, 3, 176-182.
10. Minondo, M., Boussey, J. and Kamarinos, G., Microelec. Reliability, 1997, 37, 53-60.
11. Higuchi, H. and Ochi, S., In Proc. Symp. 1/f fluctuations, 1977, pp. 140-147.
12. Kleinpenning, T. G. M., Physica B, 1987, 145, 190-194.
13. Kleinpenning, T. G. M., IEEE Trans. Electron Devices, 1994, 41, 1981-1991.
14. Hooge, F. N., Kleinpenning, T. G. M. and Vandamme, L. K. J., Rep. Prog. Phys., 1981, 44, 497-532.
15. Vandamme, L. K. J. and Oosterhoff, S., J. Appl. Phys., 1986, 59, 3169-3174.
16. Vandamme, L. K. J., IEEE Trans. Electron Devices, 1989, 36, 987-992.
17. Dai, Y. and Chen, H., Solid-State Electron., 1991, 34, 259.
18. Borrello, S. and Celik-Butler, Z., Solid-State Electron., 1993, 36, 407.
19. Rotondaro, A. L. P., Vandamme, E. P., Vanhellemont, J., Simoen, E., Heyns, M. M. and Claeys, C., In Proc. of the 6th Conf. on Gettering and Defect Engineering in Semiconductors (GADEST '95), 1995, 397-402.
20. Ivanov, S. N., Penin, N. A., Skvortsova, N. E. and Sokolov, Y. F., Physics of microwave semiconductor diodes, IBL, 1969.
21. Hooge, F. N., IEEE Trans. Electron Devices, 1994, 41, 1926-1935.