Low-Frequency Noise in Polysilicon Emitter Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 42, Issue 4, 1995, Pages 720-727

  Markus, H A W ^a   Kleinpenning, T G M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); OXIDATION; POLYCRYSTALLINE MATERIALS; SIGNAL TO NOISE RATIO; SILICON WAFERS; SPURIOUS SIGNAL NOISE; TRANSPARENCY;

BARRIER HEIGHT FLUCTUATIONS; LOW FREQUENCY NOISE; MOBILITY FLUCTUATIONS; MONOSILICON POLYSILICON INTERFACE; OXIDE LAYER; POLYSILICON EMITTER BIPOLAR TRANSISTORS; TRANSPARENCY FLUCTUATIONS; WHITE NOISE MEASUREMENTS;

BIPOLAR TRANSISTORS;

EID: 0029291962     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.372077     Document Type: Article

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