Noise phenomena associated with dislocations in bipolar transistors

Solid State Electronics

Volumn 26, Issue 2, 1983, Pages 109-113

  Mihaila, Mihai ^a   Amberiadis, Kostas ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, BIPOLAR;

EID: 0020704119     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(83)90111-9     Document Type: Article

References (15)

1. Effects of diffusion-induced dislocations on the excess low-frequency noise
2. Le bruit de fond de composant actifs semiconducteurs
3. Effects of dislocations on the noise of planar p–n junctions†
4. Distribution of Surface State Density Related to Diffusion-Induced Dislocations near the Junction Formed by Diffusion of Phosphorus in Silicon