Fabrication of GaAs devices

Fabrication of GaAs Devices

Volumn , Issue , 2005, Pages 1-351

  Baca, Albert G ^a   Ashby, Carol I H ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Cleaning; Dry etching; Etching; Field effect transistors; GaAs; GaAs device fabrication; Gallium arsenide; Heterojunction bipolar transistors; III V semiconductors; MIS devices; MIS GaAs device; Ohmic contacts; Optoelectronic device; Optoelectronic devices; Oxidation; Passivation; Schottky barriers; Schottky contacts; Semiconductor devices; Semiconductor growth; Semiconductor properties; Surface cleaning; Wet oxidation

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; CLEANING; DRY ETCHING; ELECTRIC CONTACTORS; ETCHING; FIELD EFFECT SEMICONDUCTOR DEVICES; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; GALLIUM COMPOUNDS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; MIS DEVICES; OHMIC CONTACTS; OPTOELECTRONIC DEVICES; OXIDATION; PASSIVATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SURFACE CLEANING; TRANSISTORS; WET ETCHING;

DEVICE FABRICATIONS; GAAS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SEMICONDUCTOR PROPERTIES; WET OXIDATION;

ARSENIC COMPOUNDS;

EID: 85013093651     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1049/PBEP006E     Document Type: Book

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