Inductively coupled plasma reactive ion etching of GaInAsSb and AlGaAsSb for quaternary antimonide multiple interconnected module thermophotovoltaics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 2, 2003, Pages 843-847

  Peake, G M ^a   Shul, R J ^a   Ashby, C I H ^a   Cederberg, J G ^a   Hafich, M J ^a   Biefeld, R M ^a   Palmisiano, M N ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b BETTIS ATOMIC POWER LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; INDUCTIVELY COUPLED PLASMA; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

MULTIPLE INTERCONNECTED MODULE (MIM);

REACTIVE ION ETCHING;

EID: 0037279857     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1562639     Document Type: Article

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