Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 5011-5016

  Lee, Jong Lam ^a   Mun, Jae Kyoung ^b   Lee, Byung Teak ^c  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Chonnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CAPACITANCE VOLTAGE MEASUREMENTS; CHANNEL LAYERS; CHANNEL THICKNESS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; CURRENT VOLTAGE; DEPTH DISTRIBUTION; DEVICE FAILURES; ELECTRON CONCENTRATION; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FORMATION ENERGIES; GAAS; HIGH-LOW; INTERFACIAL REACTIONS; LAYERED STRUCTURES; MESFETS; OUT-DIFFUSION; SCHOTTKY CONTACTS; SCHOTTKY GATE; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; TEMPERATURE RANGE; THERMAL DEGRADATION MECHANISM; THERMAL DEGRADATIONS; THERMAL STABILITY; TI FILM;

ANNEALING; CONCENTRATION (PROCESS); DEGRADATION; ELECTRONS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM ARSENIDE; MESFET DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; THERMODYNAMIC STABILITY; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

ACTIVATION ENERGY;

EID: 0037626218     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366371     Document Type: Article

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