Orientation and dielectric overlayer effects in InGaP/GaAs heterojunction bipolar transistors

Solid-State Electronics

Volumn 46, Issue 6, 2002, Pages 797-801

  Baca, A G ^a   Monier, C ^a   Chang, P C ^a   Briggs, R D ^a   Armendariz, M G ^a   Pearton, S J ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

Dielectric stress; GaAs HBT; Heterojunction bipolar transistor; InGaP; Orientation; Plasma damage

Indexed keywords

CRYSTAL ORIENTATION; PASSIVATION; PIEZOELECTRICITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

DIELECTRIC STRESS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036604617     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00005-9     Document Type: Article

References (7)

1. 27th SOTAPOCS Proc