Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors

IEEE Transactions on Electron Devices

Volumn 50, Issue 2, 2003, Pages 532-534

  Ravi, M R ^a   DasGupta, Amitava ^a   DasGupta, Nandita ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

Photodetector; Polyimide; Sulfur passivation; Surface recombination

Indexed keywords

PASSIVATION; POLYIMIDES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SULFUR;

SULFUR PASSIVATION;

PHOTODETECTORS;

EID: 0037718541     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.808530     Document Type: Article

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