GaAs MESFET's on a truly insulating buffer layer: Demonstration of the GaAs on insulator technology

IEEE Electron Device Letters

Volumn 18, Issue 3, 1997, Pages 111-113

  Parikh, P A ^a   Chavarkar, P M ^a   Mishra, U K ^a,b  

^a University of California   (United States)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; OXIDATION; OXIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

ALUMINUM OXIDE; DRAIN OHMIC CONTACT; SOURCE OHMIC CONTACT; WET OXIDATION;

MESFET DEVICES;

EID: 0031104149     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.556097     Document Type: Article

References (11)

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