Trapped charge modulation: A new cause of instability in AlGaAs/InGaAs pseudomorphic HEMT's

IEEE Electron Device Letters

Volumn 17, Issue 5, 1996, Pages 232-234

  Meneghesso, Gaudenzio ^b   Canali, Claudio ^c   Cova, Paolo ^d   De Bortoli, Eros ^b   Zanoni, Enrico ^a,b  

^a IEEE

^b UNIVERSITY OF PADOVA   (Italy)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRONS; GATES (TRANSISTOR); HIGH TEMPERATURE TESTING; IONIZATION; MODULATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE TESTING; STABILITY; TRANSCONDUCTANCE;

DRAIN TO SOURCE CURRENTS; HOT ELECTRON STRESS TESTS; PSEUDOMORPHIC TRANSISTORS; THERMALLY STIMULATED ELECTRON DETRAPPING; THRESHOLD VOLTAGE; TRAPPED CHARGE MODULATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030150781     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.491839     Document Type: Article

References (12)

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